| سال | هفته | ID | Title | ApplNo | IPC | Applicant | Subgroup | زیر گروه | رشته | شرح | Description |
|---|
2025 | 48 | WO/2025/241416 | CLOCK CONTROL CIRCUIT, MEMORY AND CLOCK CONTROL METHOD | CN2024/127587 | G11C 7/22 | CXMT CORPORATION | PHYSICS | فیزیک | ابزارها | 2025 | 48 | WO/2025/241462 | MEMORY AND OPERATION METHOD THEREFOR, STORAGE SYSTEM, AND ELECTRONIC DEVICE | CN2024/134873 | G11C 16/10 | HUAWEI TECHNOLOGIES CO., LTD. | PHYSICS | فیزیک | ابزارها | 2025 | 48 | WO/2025/241514 | ANTI-FUSE MEMORY AND PROGRAMMING METHOD THEREFOR | CN2024/140979 | G11C 17/18 | CSMC TECHNOLOGIES FAB2 CO., LTD. | PHYSICS | فیزیک | ابزارها | 2025 | 48 | WO/2025/244674 | MEMORY CELL INCLUDING A READ CIRCUIT | US2024/054379 | G11C 11/412 | MICROSEMI SOC CORP. | PHYSICS | فیزیک | ابزارها | 2025 | 48 | WO/2025/245163 | SELECTIVE DATA CORRUPTION BEFORE ACTUAL ERASE OPERATION FOR DATA SECURITY | US2025/030270 | G11C 16/16 | MICROCHIP TECHNOLOGY INCORPORATED | PHYSICS | فیزیک | ابزارها | 2025 | 48 | WO/2025/245164 | ERASE AND WRITE OPERATIONS HAVING DIFFERENT CELL LEVELS | US2025/030271 | G11C 16/16 | MICROCHIP TECHNOLOGY INCORPORATED | PHYSICS | فیزیک | ابزارها | 2025 | 48 | WO/2025/245394 | CMOS-PROCESS COMPATIBLE, TUNABLE NEGATIVE DIFFERENTIAL RESISTANCE (NDR) FERROELECTRIC FET AND METHOD OF OPERATING THE SAME | US2025/030674 | G11C 11/22 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA | PHYSICS | فیزیک | ابزارها | 2025 | 48 | WO/2025/245475 | TRANSIENT THRESHOLD VOLTAGE SCAN | US2025/030822 | G11C 16/34 | MICRON TECHNOLOGY, INC. | PHYSICS | فیزیک | ابزارها |